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较为系统的研究了甚高频化学气相沉积在高压高功率下生长的微晶硅薄膜.给出了功率密度-气体流量和压强-功率密度的二维相图.用朗缪尔探针测出薄膜沉积时等离子体内部电子温度,并用麦克斯韦-玻尔兹曼分布进行拟合给出电子能量分布函数.由电子能量分布函数出发通过单电子碰撞模型给出等离子体内部各种基浓度的计算公式.并通过数值模拟给出等离子体中 SiH_2,SiH_3等基的浓度.利用 SiH_2与 SiH_3比值,结合表面扩散模型,解释气压-功率密度相图中随电子温度的增加(功率的增加),晶化率增大的现象.
The microcrystalline silicon thin films grown under high pressure and high power have been systematically studied in Vhf chemical vapor deposition.The two-dimensional phase diagrams of power density-gas flow rate and pressure-power density have been given.Using Langmuir probe The internal electron temperature of the plasma during the deposition of the thin film is obtained and fitted by the Maxwell-Boltzmann distribution to give the electron energy distribution function. The formula for calculating the basic concentration inside the plasma is given by the electron energy distribution function The concentrations of SiH_2 and SiH_3 in the plasma were given by numerical simulations.According to the ratio of SiH_2 to SiH_3 and the surface diffusion model, the dependence of the temperature on the electron pressure (power increase) The rate of increase of the phenomenon.