在０—１０Ｔ磁场范围内，系统地测量了ＹＢａ２Ｃｕ３Ｏ７δ外延薄膜处于磁场平行和垂直膜面两种情况下的ＲＴ曲线和ＩＶ曲线，并对该样品的不可逆线和磁通玻璃线作了直接的比较．结果表明，由不同约化电阻率判据给出的不可逆线和磁通玻璃线遵守相同的Ｈ∝（Ｔ（０）－Ｔ（Ｈ））ｎ关系．对于不可逆线，ｎ＝３／２，对于磁通玻璃线，ｎ＝４／３．不可逆线的位置不仅与判据有关而且与测量电流密度也有关，磁通玻璃线位于不可逆线的下方．探讨了磁通玻璃线与不可逆线间的关系． In the range of 0-10T magnetic field, the RT curve and IV curve of YBa2Cu3O7δ epitaxial thin film were systematically measured under both magnetic field parallel and perpendicular film conditions. The irreversible line and flux glass Line made a direct comparison. The results show that the same Hα (T (0) -T (H)) n relationship is observed for the irreversible and flux glass lines given by different reduced resistivity criteria. N = 3/2 for the irreversible line and n = 4/3 for the flux glass line. The location of the irreversible line is not only related to the criteria but also to the measured current density, with the flux glass line lying below the irreversible line. The relationship between the flux glass line and the irreversible line is discussed.