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利用同步辐射角分辨光电子能谱和俄歇电子能谱研究了Co Cu(111)分子束外延薄膜在生长和退火过程中的电子结构 .实验发现 :随着Co膜厚度的增加 ,Cu的s dz2 杂化带能级位移相应增大 ,证实了界面间发生了互混 ;退火过程中存在表面扩散 ,而非通过界面的体扩散 .并把这两种不同过程的扩散的内在动力归结为Co的表面自由能显著大于Cu的表面自由能
The electronic structures of Co (111) molecular beam epitaxial films during growth and annealing were studied by using synchrotron radiation angle-resolved photoelectron spectroscopy and Auger electron spectroscopy. The experimental results show that with the increase of Co film thickness, s dz2 The shift of the hybrid band energy level increases correspondingly, confirming the intermixing occurred between the interfaces, and the surface diffusion exists in the annealing process rather than the diffusion through the interface, and the intrinsic motivation of diffusion of these two different processes is reduced to Co Surface free energy is significantly greater than the surface free energy of Cu