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利用扫描电镜电子通道衬度(SEM-ECC)技术观察研究了[4 18 41]单滑移取向铜单晶体在不同塑性应变幅下的疲劳饱和位错结构及其在不同温度等时退火条件下的热稳定性.结果表明,在退火温度为300℃时,疲劳位错结构(如脉络结构、驻留滑移带PSB楼梯结构、PSB胞结构和迷宫结构等)均发生了明显回复.当退火温度高于500℃,上述这些疲劳位错结构基本消失,均发生了明显的再结晶现象,并大都伴随有退火孪晶的形成.分析认为,再结晶的发生和退火孪晶的出现不仅与退火温度和外加塑性应变幅有关,还与累积循环塑性应变量有着密切的关系.
The fatigue-saturated dislocation structure of [4 18 41] single-slip oriented monocrystalline single crystal under different plastic strain amplitude and its effect on isothermal annealing at different temperatures were investigated by scanning electron microscopy (SEM-ECC) Thermal stability.The results show that the fatigue dislocation structure (such as vein structure, PSB staircase structure, PSB cell structure and labyrinth structure, etc.) are obviously recovered when the annealing temperature is 300 ℃ .When the annealing temperature Above 500 ℃, the structure of these fatigue dislocation almost disappeared, and significant recrystallization took place, mostly accompanied by the formation of annealing twins.The analysis shows that the occurrence of recrystallization and the appearance of annealing twins are not only related to the annealing temperature And the additional plastic strain amplitude, but also with the cumulative cyclic plastic strain has a close relationship.