【摘 要】
：
传统的共振隧穿二极管的多峰值负微分电阻器件的峰值数目受到限制 ,由单电子器件和传统的金属氧化物半导体场效应晶体管 (MOSFET)器件组成的多峰值负微分电阻器件在原理上具
【机 构】
：
中国科学院物理研究所,中国科学院物理研究所 北京100080,北京100080
论文部分内容阅读
传统的共振隧穿二极管的多峰值负微分电阻器件的峰值数目受到限制 ,由单电子器件和传统的金属氧化物半导体场效应晶体管 (MOSFET)器件组成的多峰值负微分电阻器件在原理上具有无穷多个峰值 ,并且MOSFET使单电子晶体管 (SET)的峰值和谷值电流大小受其源漏电压的影响减小 .利用这种多峰值负微分电阻器件实现了多值存储器 ,该存储器原理上是无穷多值的 .并且利用它的折叠的I V特性 ,实现了一个 4位的FlashA D转换器 ,与传统的FlashA D转换器相比 ,SET MOSFET的A D转换器大大地简化了电路 .
The peak number of the multi-peak negative differential resistance device of the conventional resonant tunneling diode is limited. The multi-peak negative differential resistance device composed of a single-electron device and a conventional metal-oxide semiconductor field-effect transistor (MOSFET) device has in principle an infinite Multiple peaks and MOSFETs reduce the magnitude of the peak and valley currents of single-electron transistors (SETs) by the effects of their source and drain voltages Multilevel memories are implemented using such multi-peak negative differential resistance devices, which are, in principle, Infinite multi-valued. And with its folded IV characteristics, a 4-bit FlashA D converter is implemented, which greatly simplifies the circuit compared to a conventional FlashA D converter.
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