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本研究首次报导了利用喷雾热分解法成功地制备出ＺｎＯ 低压压敏薄膜。沉积温度３５０ ℃，沉积时间２ｈ ，退火温度６５０ ℃，ＸＲＤ 谱表明薄膜已良好晶化且薄膜的生长具有取向性。所制备的薄膜的非线性系数 α可在７ ．９９ ～２２ ．３８ 之间变化。压敏电压Ｖ１ｍＡ可在１３ ．５８ ～２５ ．３１ 之间任意变化；实验证明薄膜的厚度是决定压敏电压和非线性系数大小的重要因素之一。
This study reports for the first time the successful preparation of low pressure ZnO thin films by spray pyrolysis. The deposition temperature is 350 ℃, the deposition time is 2h and the annealing temperature is 650 ℃. The XRD patterns show that the film has been crystallized and the growth of the film has the orientation. The film prepared non-linear coefficient α can be 7. 99 ~ 22. 38 between the changes. Varistor voltage V1mA is available at 13. 58 ~ 25. 31 any change between; experimental results show that the thickness of the film is to determine the voltage-dependent voltage and nonlinear coefficient of the size of one of the important factors.