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研究了M EVVA离子注入机在F e/S i系薄膜制备过程中产生的颗粒污染问题以及颗粒污染对薄膜质量带来的影响。选取不同制备条件下的F e/S i薄膜,采用电子探针、透射电镜等分析手段对颗粒污染给F e/S i薄膜所造成的影响进行了详细的分析和讨论。分析结果表明,M EVVA源离子注入机产生的颗粒污染主要包括F e、A l、C、O等几种元素,这其中F e和A l元素的污染较为严重。不同注入时期引入的颗粒对F e/S i系薄膜的质量会产生不同程度的影响,针对不同的影响可以找到一些解决方法来克服薄膜质量下降的问题。
The particle contamination problem of M EVVA ion implanter during the preparation of F e / S i thin films and the influence of particle contamination on the film quality were studied. The F e / S i thin films with different preparation conditions were selected and the effects of particle contamination on Fe / S i thin films were analyzed and discussed in detail by means of electron probe and transmission electron microscopy. The results show that the particulate pollution generated by M EVVA source ion implanter mainly includes F e, Al, C, O and other elements, of which F e and Al elements are more seriously polluted. The particles introduced at different injection stages have different degrees of influence on the mass of F e / S i films, and some solutions can be found for different effects to overcome the problem of film quality degradation.