论文部分内容阅读
,Performance improvement of charge trap flash memory by using a composition-modulated high-k trappin
【机 构】
：
College of Physics and Electronic Engineering, Anyang Normal University, Anyang 455000, China“,”Scho
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2004年期
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