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通过离子束溅射技术淀积在SiO2 /Si衬底上的钛酸镧钡铌膜 (Ba1-xLaxNbyTi1- yO3) ,制成集薄膜电阻和金属 -绝缘体 -半导体 (MIS)电容为一体的传感器 .实验结果表明 ,薄膜电阻在 30 3～ 6 73K温度范围内对可见光和热具有良好的灵敏特性 ,同时MIS电容对相对湿度有很高的灵敏度 .我们测试了此薄膜的光吸收特性 ,并得到了它的禁带宽度 .最后 ,我们研究了薄膜电阻的阻抗温度频率特性和频率对MIS电容湿敏特性的影响 .
A BaTiOxTi1-yO3 thin film deposited on a SiO2 / Si substrate by ion beam sputtering was used to fabricate a thin film resistor and metal-insulator-semiconductor (MIS) capacitor. The experimental results show that the film resistance has good sensitivity to visible light and heat in the temperature range of 30 3 ~ 6 73K, and the MIS capacitance has high sensitivity to relative humidity.We tested the light absorption characteristics of this film and got Its band gap.Finally, we study the influence of the frequency and temperature of the resistance temperature of the thin film resistor on the humidity characteristics of the MIS capacitor.