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本文讨论了影响电化学C-V法测量半导体载流子浓度分布的因素,其中包括接触面积、半导体种类、电解液种类和界面分辨率等.已经证明用直接补偿法可以有效地校正寄生面积对浓度分布测量的影响.在研究半导体和溶液种类的影响时,发现在同一种溶液中,各种GaAs的C-V特性均能符合Mott-Schattky方程式.在上述结果的基础上,我们将电化学C-V法成功地应用于测定P-N,高-低-高结构,GaInAsP发光材料和离子注入样品的载流子浓度分布,得到了满意的结果.
This article discusses the factors that affect the CV distribution of semiconductor carriers, including the contact area, the type of semiconductor, the type of electrolyte, the resolution of the interface, etc. It has been shown that the direct compensation method can effectively correct the effect of the parasitic area on the concentration distribution The influence of the measurements on the semiconductor and solution types was investigated and it was found that the CV characteristics of various GaAs in the same solution all fit the Mott-Schattky equation.On the basis of the above results, It has been applied to the determination of carrier concentration distribution in PN, high-low-high structure, GaInAsP luminescent materials and ion-implanted samples, and satisfactory results have been obtained.