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介绍了一种基于0.6 μm BiCMOS工艺的高阶曲率补偿、高电源抑制比的带隙基准源.利用三极管电流增益的温度特性来实现低温度系数,并且不需要额外的电路.采用一种新颖的电压预调整器来实现高电源抑制比.结果表明,该带隙基准源在-40℃～120℃内的温度系数为2.83×10-6/℃,在低频、100 kHz、1 MHz处的电源抑制比分别为-127、-98、-67 dB.最低工作电压为1.8V,在1.8～3 V电源电压范围内的线性调整率为4×10-5/V,功耗为57μW.,A high order curvature compensated and high power supply rejection ratio (PSRR) bandgap reference was designed and implemented in a 0.6 μm BiCMOS process.The curvature compensation was achieved by utilizing the temperature characteristics of the bipolar transistor’s current gain β without additional complex circuits.Furthermore,a new voltage pre-regulator was used to improve the PSRR.The proposed bandgap reference featured a temperature coefficient of 2.83 × 10-6/℃ at a temperature range from-40 ℃ to 120 ℃,a PSRR of-127 dB,-98 dB,-67 dB at a low frequency,100 kHz,1 MHz respectively,a minimum supply voltage of 1.8 V,a line regulation of 4× 10-5/V from 1.8 V to 3 V supply with a power dissipation of 57 μW.