主要研究了GaSb单晶片的化学机械抛光(CMP)。使用硅溶胶作为抛光液对切割、机械抛光后的GaSb单晶片进行了CMP实验。在实验中,通过调节抛光液配比、pH值等工艺参数,研究不同氧化剂的掺入以及抛光液不同pH值对GaSb单晶片表面的影响。通过实验得出,最终在pH值为8且使用NaClO作为氧化剂的条件下,得到平整度较好、表面缺陷少、表面粗糙度低的高质量抛光表面的GaSb单晶片。通过微分干涉显微镜观察抛光后的单晶片表面无明显缺陷。经原子力显微镜(AFM)测试,单晶片的表面粗糙度达到了0.257 nm。 The main study of GaSb single-wafer chemical mechanical polishing (CMP). A CMP experiment was performed on the cut, mechanically polished GaSb single wafer using a silica sol as a polishing solution. In the experiment, by adjusting the polishing solution ratio, pH and other process parameters, the study of different oxidants and different pH polishing slurry on the surface of GaSb single crystal. It was experimentally found that a GaSb single-crystal wafer with a high-quality polished surface with good flatness, few surface defects and low surface roughness was finally obtained under the condition of pH 8 and using NaClO as an oxidizing agent. There is no obvious defect on the surface of the polished single wafer after it is observed by differential interference microscope. The atomic force microscope (AFM) test, the single-wafer surface roughness reached 0.257 nm.