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提出一种新型的PMOS选择分裂位线NOR结构快闪存贮器 ,具有高编程速度、低编程电压、低功耗、高访问速度和高可靠性等优点 .该结构采用源极增强带带隧穿热电子注入进行编程 ,当子位线宽度为 12 8位时 ,位线漏电只有 3 5 μA左右 ,每位编程功耗为 16 5 μW ,注入系数为 4× 10 -4 ,编程速度可达 2 0 μs,存贮管的读电流可达 6 0 μA/ μm以上 .分裂位线结构和低编程电压使得该结构具有很好的抗位线串扰特性和可靠性 .
A new type of PMOS select-split NOR flash memory is proposed, which has the advantages of high programming speed, low programming voltage, low power consumption, high access speed and high reliability etc. This architecture uses source- With hot electron injection programming, when the sub-bit line width is 12 8 bits, the bit line leakage is only about 35 μA, with a programmed power consumption of 16 5 μW per bit, an injection factor of 4 × 10 -4, and a programming speed of up to 2 0 μs, the reading current of the storage pipe can reach more than 60 μA / μm. The split bit line structure and the low programming voltage make the structure have good anti-bitline crosstalk characteristics and reliability.