一、引言离子注入半导体的激光退火问题,目前已进行过很多研究,退火机理已基本研究清楚。在脉冲或高功率激光照射下,样品表面层要发生熔化,退火是“液相外延”过程,而在连续波或低功率激光照射下,样品表面层并不熔化,退火是“固相生长”过程。因此激光退火有熔化和固相生长两种机制。 I. INTRODUCTION There are many studies on laser annealing of ion implantation semiconductors. The mechanism of annealing has been basically studied clearly. In the pulse or high-power laser irradiation, the sample surface layer to be melted, annealing is the “liquid phase epitaxy” process, and continuous wave or low-power laser irradiation, the sample surface layer does not melt, annealing is “solid phase growth” process. Therefore, there are two mechanisms of laser annealing melting and solid phase growth.