针对用于制备非晶硅薄膜的PECVD设备反应室的流体场进行了模拟仿真,并实验制备了相对应条件下的非晶硅薄膜,利用台阶仪完成了对薄膜厚度的测量,对比仿真结果,发现薄膜的厚度分布情况与基片表面附近的气流分布情况密切相关,获得均匀性优于2.5%非晶硅薄膜。 Aiming at the fluid field in the reaction chamber of PECVD equipment used to prepare amorphous silicon thin film, the amorphous silicon thin film was prepared experimentally and the thickness of the thin film was measured with a stepper. Comparing the simulation results, It is found that the thickness distribution of the film is closely related to the gas flow distribution near the substrate surface, and the uniformity is better than that of the 2.5% amorphous silicon film.