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为了能够准确地预测器件的寿命,研究了PMOSFET中的动态负偏压温度不稳定性效应(NBTI)模型.在静态NBTI效应模型及反应-扩散模型(R-D)的基础上,推导出动态NBTI应力下界面陷阱电荷模型,其与占空比成指数关系.考虑到占空比对器件NBTI效应的影响,推导出动态NBTI应力下阈值电压退化模型.通过实验所得到的器件退化数据和仿真数据进行比较分析,证明了阈值电压漂移量随着占空比近似按照指数规律变化,与模型相符合,可以预测器件交流应力的实际寿命.
In order to accurately predict the lifetime of the device, the dynamic negative bias temperature instability (NBTI) model in PMOSFET was studied.Based on the static NBTI model and the reaction-diffusion model (RD), the dynamic NBTI stress Lower interface trap charge model, which is an exponential relationship with the duty cycle. Considering the effect of duty cycle on the device NBTI effect, a threshold voltage degradation model under dynamic NBTI stress is derived. Degradation data and simulation data The comparison and analysis show that the threshold voltage drift changes as the duty cycle changes exponentially, which is consistent with the model, which can predict the actual life of AC stress.