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在红光半导体激光器芯片上采用Si O2介质膜进行无杂质空位扩散诱导量子阱混杂研究。激光器芯片的有源区是由两个6 nm厚的Ga In P量子阱和三个8 nm厚的Al Ga In P量子垒构成,利用电子束蒸发方法在芯片表面生长了250 nm Si O2介质膜。在不同温度下进行时长60 s的高温快速退火诱发量子阱混杂。通过光致发光光谱分析样品混杂之后的波长蓝移情况和光谱半峰全宽变化规律。当退火温度达到900℃时,样品获得29.5 nm的最大波长蓝移;在750℃的退火温度下获得43 nm的最小光谱半峰全宽。
In the red semiconductor laser chip using Si O2 dielectric film impurity-free interstitial diffusion induced trap hybrid study. The active area of the laser chip is composed of two Ga In P quantum wells with a thickness of 6 nm and three Al Ga In P quantum barriers with a thickness of 8 nm. A 250 nm Si O2 dielectric film is grown on the surface of the chip by electron beam evaporation . The rapid annealing at high temperature for 60 s at different temperatures induced quantum well hybridization. The blue-shift of the wavelength and the change of the full width at half maximum of the sample were analyzed by photoluminescence spectroscopy. When the annealing temperature reaches 900 ℃, the maximum wavelength blue shift of 29.5 nm was obtained for the sample. The full width at half maximum of 43 nm was obtained at annealing temperature of 750 ℃.