制备温度对(a-C∶Fe)/Al2O3/Si结构光电转换效应影响的研究

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采用脉冲激光沉积法在n-Si(100)衬底上制备氧化铝膜(Al2O3)和不同温度下的铁掺杂非晶碳薄膜(a-C∶Fe)。I-V特性曲线表明:制备的a-C∶Fe/Al2O3/Si异质结结构具有明显的整流特性和光伏效应,碳膜的制备温度对a-C∶Fe/Al2O3/Si结构电池光伏性能有显著影响。合适的沉积温度能显著增大异质结的开路电压和短路电流,进而增大异质结的光电转换效率,在碳膜制备温度为350℃时,异质结获得最佳光电转换效率。当制备温度超过350℃时,电池的开路电压与短路电流大幅度减小。通过对a-C∶Fe膜的拉曼光谱分析显示,随着制备温度的升高,非晶碳膜的结构经历了从类金刚石向类石墨化的转变,从而对电池的光电转换特性造成显著影响。 Aluminum oxide films (Al2O3) and iron-doped amorphous carbon films (a-C: Fe) were fabricated on n-Si (100) substrates by pulsed laser deposition. The I-V characteristic curve shows that the prepared a-C: Fe / Al 2 O 3 / Si heterostructure has obvious rectifying characteristics and photovoltaic effect, and the carbon film preparation temperature has a significant effect on the photovoltaic performance of a-C: Fe / Al 2 O 3 / Si structure cells. Appropriate deposition temperature can significantly increase the open circuit voltage and short circuit current of the heterojunction, thereby increasing the photoelectric conversion efficiency of the heterojunction. The optimal photoelectric conversion efficiency of the heterojunction is obtained when the carbon film is prepared at a temperature of 350 ° C. When the preparation temperature exceeds 350 ℃, the battery open circuit voltage and short-circuit current greatly reduced. The Raman spectra of the a-C: Fe films show that the structure of the amorphous carbon films undergoes the transition from diamond-like to graphitization with the increase of the preparation temperature, which has a significant impact on the photoelectric conversion characteristics of the cells.
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