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研究了埋氧层中注氮后对制作出的部分耗尽SOInMOSFET的特性产生的影响 .实验发现 ,与不注氮的SIMOX基片相比 ,由注氮SIMON基片制作的nMOSFET的电子迁移率降低了 .且由最低注入剂量的SIMON基片制作的器件具有最低的迁移率 .随注入剂量的增加 ,迁移率略有上升 ,并趋于饱和 .分析认为 ,电子迁移率的降低是由于Si SiO2界面的不平整造成的 .实验还发现 ,随氮注入剂量的提高 ,nMOSFET的阈值电压往负向漂移 .但是 ,对应最低注入剂量的器件阈值电压却大于用SIMOX基片制作出的器件 .固定氧化物正电荷及界面陷阱密度的大小和分布的变化可能是导致阈值电压变化的主要因素 .另外发现 ,用注氮基片制作出的部分耗尽SOInMOSFET的kink效应明显弱于用不注氮的SIMOX基片制作的器件 .
The effect of nitrogen deposition on the characteristics of the partially depleted SOInMOSFET fabricated after nitrogen injection was investigated. It was found that the electron mobility of the nMOSFET fabricated from the SIMON substrate was higher than that of the SIMOX without nitrogen injection And the device fabricated by the SIMON substrate with the lowest implantation dose has the lowest mobility.With the increase of the implantation dose, the mobility slightly increases and tends to be saturated.The analysis shows that the reduction of the electron mobility is due to Si The results also showed that the threshold voltage of the nMOSFET drifted negatively with the increase of the nitrogen implantation dose, but the threshold voltage of the device corresponding to the lowest injection dose was greater than that of the SIMOX substrate. The change of the size and distribution of the positive charges and interface trap density may be the main factor leading to the threshold voltage change.It is also found that the kink effect of the partially depleted SOInMOSFET fabricated by the nitrogen-implanted substrate is significantly weaker than that of the SIMOX Substrate made device.