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本文采用微波吸收法,测量了ZnS:Mn,Cu:I,Br粉末材料受到超短激光脉冲激发后,其光生电子和浅束缚电子的衰减过程。发现制备过程中Mn2+、Cu+、I-、Br-的掺杂量对光生导带电子的衰减过程有明显的影响。光生电子寿命是I-、Br-形成的浅施主能级和Cu+受主能级、Mn2+发光中心共同作用的结果。本文还测量了材料的热释光曲线,Cu+受主能级、Mn2+发光中心会影响热释光强度,证实I-、Br-形成电子陷阱对光生电子和浅陷阱中的电子寿命有延长作用,而Mn2+发光中心会起到缩短寿命的作用。
In this paper, the decay process of photogenerated electrons and shallowly bound electrons of ZnS: Mn, Cu: I, Br powders after ultrashort laser pulse excitation was measured by microwave absorption method. It is found that the doping amount of Mn2 +, Cu +, I-, Br- has a significant effect on the decay process of photogenerated conduction band electrons in the preparation process. The lifetime of photogenerated electron is the result of shallow donor level formed by I-, Br- and Cu + acceptor level and Mn2 + luminescent center. The thermoluminescence curve, the Cu + acceptor level and the Mn2 + luminescence center of the material are also measured. The results show that the I- and Br- formation electron traps have the effect of prolonging the electron lifetime in both photogenerated and shallow traps, The Mn2 + luminescent center will play a role in shortening the life expectancy.