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本文给出了大规模集成电路CMOS4 0 6 9、浮栅ROM器件在北京同步辐射装置 (BSRF)和钴源辐照的X射线剂量增强效应实验结果。通过实验在线测得CMOS4 0 6 9阈值电压漂移随总剂量的变化 ,测得 2 8f 2 5 6、2 9c2 5 6位错误数随总剂量的变化 ,给出相同累积剂量时X光辐照和γ射线辐照的总剂量效应损伤等效关系。这些结果对器件抗X射线辐射加固技术研究有重要价值
In this paper, experimental results of X-ray dose enhancement of large scale integrated circuit CMOS4 069, floating-gate ROM device in Beijing Synchrotron Radiation Facility (BSRF) and cobalt source irradiation are presented. By experimentally measuring the threshold voltage shift of CMOS4 0 6 9 with the change of the total dose, the errors of 2 8f2 5 6,2 9c2 5 6 bits with the change of the total dose were measured and the X-ray irradiation at the same cumulative dose and γ - ray Irradiation Total dose effect Damage Equivalent relationship These results are of great value to the research of device anti-X-ray radiation strengthening technology