利用具有无坩埚、高稳定性等特性的光辐射悬浮区熔法,制备R2PdSi3(R=Pr,Tb和Gd)单晶。从原材料和试样制备过程、单晶生长过程、熔体内部以及单晶基体4个方面研究单晶制备过程中一个很重要的现象,第二相沉淀。采用退火热处理方法以及给料棒成分微调法可以有效减少凝固后期冷却过程中由于Si溶解度降低析出的条纹状RSi(R=Pr,Tb和Gd)沉淀。 R2PdSi3 (R = Pr, Tb and Gd) single crystals were prepared by the optical radiation suspension zone melting method with features of no crucible, high stability and the like. From the raw material and sample preparation process, single crystal growth process, the melt interior and single crystal substrate four aspects of single crystal preparation process of a very important phenomenon, the second phase precipitation. The annealing heat treatment method and feed rod composition fine adjustment method can effectively reduce the precipitation of streaky RSi (R = Pr, Tb and Gd) precipitated due to the decrease of Si solubility during the post-solidification cooling.