针对数字电路的开发和应用,设计了一种薄基区晶体管,其横向结构采用单侧基极引出。 采用全离子注入,实现了基区宽度为80~100 nm的npn纵向结构。基极用电压输入,Vbe在1.2 V附 近时,跨导峰值gmac(△Ic／△Vbe)=0.4 mS,βac(△Ic／△Ib)=2.5。当Vbe从0.5 V变到1.2 V时,gmac／ gm比βac／β大得多。跨导比电流增益更能准确地描述器件特性。这种器件更倾向于电压控制型器 件,用输入电压的变化可以很方便地控制器件开关状态的转换,特别适合于数字电路的开发和应 用。采用研制的器件连接了双稳态电路,在电压脉冲的控制下实现了双稳态的翻转。 Aiming at the development and application of digital circuits, a thin base transistor is designed, whose lateral structure is led by unilateral base. All-ion implantation is used to achieve the npn vertical structure with a base width of 80-100 nm. When the Vbe is around 1.2 V, the transconductance peak gmac (ΔIc / ΔVbe) = 0.4 mS and βac (ΔIc / ΔIb) = 2.5. When Vbe changes from 0.5 V to 1.2 V, gmac / gm is much larger than βac / β. Transconductance is more accurate than the current gain to describe the device characteristics. This device is more prone to voltage-controlled devices, with the input voltage changes can easily control the switching state of the device, especially for digital circuit development and application. The bistable circuit is connected by the developed device, and the bistable flip is realized under the control of the voltage pulse.