I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell

来源 :半导体光子学与技术：英文版 | 被引量 : 0次 | 上传用户：ty5004

【摘要】

：

The analysis of solar cell performance has been done by simulating the external I-V characteristics of n^+/p/p^+ single crystal silicon solar cell under high li

【作者】

：

MabroukGAbdrhman YAOKai－lun 等

【机构】

：

HuazhongUniversityofScience＆Technology,HuazhongUniversityofScience＆Technology

【出处】

：

半导体光子学与技术：英文版

【发表日期】

：

1999年4期

【关键词】

：

单晶硅太阳能电池效率伏安特性曲线 Characteristics Efficiency Single Crystal Silicon Solar Cell

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The analysis of solar cell performance has been done by simulating the external I-V characteristics of n^+/p/p^+ single crystal silicon solar cell under high light intensity and 1.5 air mass(AM).This method allows the maximization of solar cell efficiency

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I—V Curve Characterization of n^＋／p／p^＋ Silicon Solar Cell

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