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通过直流磁控溅射法在单晶Si(100)基底上制备了Zr/Nb/Si薄膜材料。X射线衍射(XRD)研究表明Zr薄膜以多晶形式存在,而Nb薄膜则形成了(110)晶面择优生长。薄膜中Zr和Nb晶粒大小分别为14,6 nm。扫描电镜研究表明形成的薄膜表面平整光滑,没有微裂纹存在。扫描俄歇电子能谱及X射线光电子能谱的研究表明,Zr/Nb/Si薄膜样品具有清晰的界面结构。在薄膜表面形成了致密的氧化层物种,而在膜层内部少量氧则以吸附态形式存在。
Zr / Nb / Si thin films were prepared on single-crystal Si (100) substrates by DC magnetron sputtering. X-ray diffraction (XRD) studies indicate that the Zr thin films exist in the polycrystalline form, whereas the Nb thin films form the preferential growth of the (110) crystal plane. The size of Zr and Nb in the film are 14,6 nm respectively. Scanning electron microscopy showed that the film surface formed smooth, no micro-cracks exist. Scanning Auger electron spectroscopy and X-ray photoelectron spectroscopy studies show that Zr / Nb / Si thin film samples have a clear interface structure. A dense oxide layer is formed on the surface of the film, while a small amount of oxygen exists in the adsorbed state inside the film.