1引言发射波长在780~810nm区的大功率注入式激光二极管线阵广泛用于抽运含Ho、Ho/Tm和Nd的激活介质，并在工艺和医学有许多重要应用。研究了用改良液相外延法在四元化合物InGaAsP激光线阵的振荡光谱。激活区含铝能达到所需要的激光波长，但会形成降低线阵寿命和功率的缺陷[1，2 1 INTRODUCTION High power injection laser diode lasers with emission wavelengths in the 780- 810 nm range are widely used to pump Ho, Tm, and Ho containing activators and have many important applications in process and medicine. The oscillation spectra of Quaternary InGaAsP laser arrays with modified liquid-phase epitaxy have been studied. The activation zone contains aluminum to achieve the desired laser wavelength but creates defects that reduce the lifetime and power of the array [1,2