论文部分内容阅读
In this paper the fabrication technique of amorphous SnO 2:(Zn,In) film is presented.The transmittance and gap-states distribution of the film are given.The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory.The distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.
In this paper the fabrication technique of amorphous SnO2: (Zn, In) film is presented. The transmittance and gap-states distribution of the film are given. The experimental results of gap-states distribution are compared with the calculated results by using the facts of short range order and lattice vacancy defect of the gap states theory. the distribution of gap state has been proved to be discontinuous due to the short-range order of amorphous structure.