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本文用选择铌膜刻蚀或选择铌膜阳极氧化过程研究了全铌隧道结Ｎｂ／ＡｌＯｘＡｌ／Ｎｂ的制备．借助于ＳＥＭ，利用曝光后烘烤处理研究了高质量光刻胶图形的制备工艺，并分析了其对铌结特性的影响．结面积为７μｍ２的铌结具有典型的ＩＶ曲线，在４．２Ｋ时，他们的特性参数Ｖｍ～２０ｍＶ，能隙电压Ｖｇ～２．７ｍＶ，临界电流密度Ｊｃ～３０００Ａ／ｃｍ２，比电阻ρｎ～１μΩｃｍ２．这些铌结能够被直接应用于ｄｃＳＱＵＩＤ．
In this paper, the choice of niobium film etching or choose niobium film anodic oxidation process niobium niobium tunnel junction Nb / AlOx AL / Nb preparation. With the aid of SEM, the preparation process of high quality photoresist pattern was studied by means of post-exposure bake treatment, and the effect of Nb on the properties of niobium was analyzed. The junction area of 7μm2 niobium junction with a typical I V curve at 4.2K, their characteristic parameters Vm ~ 20mV, gap voltage Vg ~ 2.7mV, the critical current density Jc ~ 3000A / cm2, the specific resistance ρn ~ 1μΩcm2. These niobium junctions can be directly applied to dcSQUID.