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目前对精确了解和解释形成超晶格的不同半导体化合物之间界面性质的研究给予很大的注意。确定了由于自发产生的能量为0.2和0.3θV的局部缺陷而不能确定界面的精确结构(考虑到位错的扩散过程或晶格参数和其它因素稍微不一致)。也发现给定半导体对的异质结能级图上的能带位移并不固定,而与制造时的具体条件有关。结论是:采用相应的工艺方法时,能带位移是一种可控的因素。本文讨论克服与超晶格器件中分界不理想
At present, great attention is paid to the study of the interfacial properties between different semiconductor compounds that form and understand the superlattice accurately. The exact structure of the interface can not be determined due to localized defects of spontaneously generated energies of 0.2 and 0.3θV (considering the dislocation diffusion process or the lattice parameters are slightly inconsistent with other factors). It has also been found that the band shift in the heterojunction energy level diagram for a given semiconductor pair is not fixed, but rather relates to the specific conditions at the time of manufacture. The conclusion is: With the corresponding process method, band displacement is a controllable factor. This article discusses overcoming the boundaries with superlattice devices that are not ideal