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利用原子力显微镜 ,同步辐射X射线形貌术和化学腐蚀光学显微等方法深入研究了KTiOAsO4 晶体缺陷中的铁电畴和位错。首次用原子力显微镜给出了用两种腐蚀剂腐蚀过的KTA晶体表面的铁电畴和位错蚀坑的照片及定量信息 ,如发现铁电畴的明区要高于暗区 ,且两者的粗糙度明显不同。这为研究各种晶体的生长缺陷开辟了一条新的途径。
The ferroelectric domains and dislocations in KTiOAsO4 crystal defects were investigated in detail by atomic force microscopy, synchrotron radiation X-ray topography and chemical-etching optical microscopy. For the first time, atomic force microscopy is used to obtain the photo and quantitative information of the ferroelectric domains and dislocation pits on the surface of KTA crystals etched with two etchants. If the areas of the ferroelectric domains are found to be higher than the dark areas, Roughness is significantly different. This opens up a new way for studying the growth defects of various crystals.