深X射线光刻是制作高深宽比MEMS结构的一个重要方法。提出一种基于硅工艺和双面对准技术的LIGA掩模技术 ,工艺十分简单。采用该掩模 ,可进一步解决深X射线光刻中的重复对准多次曝光问题。给出了该掩模设计制作工艺过程及深X射线光刻结果。整个过程包括沉淀氮化硅、采用KarlSuss双面对准曝光机进行UV光刻、电化学淀积金吸收体、体硅腐蚀形成支撑膜等。利用该掩模在北京BEPC的X射线光刻光束线上进行曝光 ,获得了满意结果。 Deep X-ray lithography is an important method of making high aspect ratio MEMS structures. A LIGA mask technology based on silicon technology and double-sided alignment technology is proposed, and the process is very simple. Using this mask, the problem of repeated alignment multiple exposure in deep X-ray lithography can be further solved. The mask design and fabrication process and deep X-ray lithography results are given. The whole process includes the deposition of silicon nitride, UV lithography with a KarlSuss double-sided alignment exposure machine, electrochemical deposition of a gold absorber, bulk silicon etching to form a support film and the like. The mask was used to expose the BEPC X-ray lithography beam in Beijing, and satisfactory results were obtained.