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以硝酸铈为原料,十二烷基苯磺酸钠为分散剂,过氧化氢为氧化剂,氨水为沉淀剂,采用直接沉淀法制备了粒径分布均匀的纳米氧化铈粉体,并通过XRD,TEM等手段对粉体进行了表征。采用所制备的氧化铈粉体配置成抛光浆料对硅片进行抛光,研究了浆料pH值、固含量及过氧化氢浓度对n型半导体硅晶片(111)晶面抛光性能的影响。确定了最佳的抛光条件为:pH值10.5,含固量为0.5%,过氧化氢体积分数为1.5%,此时的抛光速率为61.1 nm.min-1,所抛光的硅晶片的表面粗糙度为0.148 nm。
Using cerium nitrate as raw material, sodium dodecyl benzene sulfonate as dispersant, hydrogen peroxide as oxidant and ammonia as precipitating agent, nano-sized cerium oxide powder with uniform particle size distribution was prepared by direct precipitation method and characterized by XRD, TEM and other means of powder were characterized. The prepared cerium oxide powder was used to polish the silicon wafer by polishing slurry. The effects of slurry pH value, solid content and hydrogen peroxide concentration on the polishing performance of n-type semiconductor silicon wafer (111) surface were investigated. The optimal polishing conditions were as follows: the pH value was 10.5, the solid content was 0.5%, the hydrogen peroxide concentration was 1.5%, the polishing rate was 61.1 nm.min-1, the surface roughness of polished silicon wafer Degree is 0.148 nm.