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1 引言 平面型的金属-半导体-金属(MSM)结构器件最早由美国的S.M.Sze等人于1971年首先提出概念,并研制成硅上的MSM结构器件。测试结果表明其特性不同于单个肖特基结器件。1985年,德国亚琛工业大学半导体电子学研究所的W.Roth等人率先将其应用于光电探测器(PD),研制成第一个GaAs MSM-PD。该结构解决了以前垂直结构的光电器件与平面结构的电子器件集成工艺方面的困难,具有制作工艺简单、同现有的场效应晶体管工艺兼容和
1 Introduction Flat-type metal-semiconductor-metal (MSM) structural devices were first proposed by S. S. Sze et al. In the United States in 1971 and were first developed as MSM structural devices on silicon. Test results show that its characteristics are different from a single Schottky junction device. In 1985, W.Roth et al., Institute of Semiconductor Electronics, RWTH Aachen University, Germany took the lead in applying it to photodetectors (PDs) to develop the first GaAs MSM-PD. The structure solves the difficulties in the integration process of the optoelectronic device with the planar structure in the previous vertical structure and has the advantages of simple fabrication process, compatibility with the existing field-effect transistor process and