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在氧气和氩气的混合气体中 ,在没有额外加热的条件下用反应射频 (RF)溅射硅靶制备了非晶氧化硅(a- Si O2 )薄膜 ,并测试分析了薄膜的结构和电特性与 O2 / Ar流量比的关系。当固定氩气流量 ,改变氧气流量时 ,薄膜沉积速率先急剧减少 ,再增大 ,然后又减少。当 O2 / Ar≥ 0 .0 75时 ,得到满足化学配比的氧化硅薄膜。并且 ,随着 O2 / Ar流量比的增大 ,薄膜的电阻、电场击穿强度都有所增大 ,而在 HF缓冲溶液 (BHF)中的腐蚀速率下降。所有的样品中无明显的 H- OH水分子的红外吸收峰。比较发现反应射频 (RF)磁控溅射法制备的a- Si O2 薄膜具有良好的致密性和绝缘性。
In a mixed gas of oxygen and argon, amorphous silicon oxide (a-Si O2) films were prepared by reactive radio frequency (RF) sputtering of silicon targets without additional heating and the structure and electrical properties of the films were tested Characteristics and O2 / Ar flow ratio relationship. When the argon flow rate is fixed and the oxygen flow rate is changed, the film deposition rate decreases sharply, then increases, and then decreases again. When O2 / Ar ≥ 0. 0 75, to obtain a stoichiometric ratio of silicon oxide film. Moreover, with the increase of the O2 / Ar ratio, the resistance of the film and the breakdown strength of the electric field are increased, while the corrosion rate in the HF buffer solution (BHF) is decreased. No obvious infrared absorption peak of H-OH water molecule in all the samples. The results show that a-Si O2 thin films prepared by reactive RF magnetron sputtering have good densification and insulation.