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日本东芝公司已开始出售型号为TC51832P-85的新产品,它可用作256Kb伪静态随机存取存储器(SRAM),存取时间为85ns。另外还有两种TC51832P 系列产品,它们的存取时间分别为100ns和220ns。这些新产品通过降低阻值和减少延迟时间,存取时间已达到与普通SRAM等同的程度,它具有多晶硅和铝两层结构,字线连接到每个32行(位),使高速运行的读数电路的位线的预充电电平达到电源电压的一半。这种器件使用一种高速、精密的灵敏放大器。
Toshiba of Japan has already begun to sell the new product model TC51832P-85, it can be used as 256Kb Pseudo Static Random Access Memory (SRAM), access time is 85ns. In addition there are two TC51832P series of products, their access time was 100ns and 220ns. By reducing the resistance and reducing the latency, these new products have equivalent access times to normal SRAM. The new products feature a polysilicon and aluminum two-layer structure. The word lines are connected to each 32 rows (bits), enabling high-speed readings The pre-charge level of the bit line of the circuit reaches half the supply voltage. This device uses a high-speed, precision sense amplifier.