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本文报道用微波等离子体沉积／原子氢处理交互进行方法低温制备多晶硅（ｐｏｌｙ－Ｓｉ）薄膜及其结构特征和光电特性．Ｘ光衍射（ＸＲＤ）、透射电镜（ＴＥＭ）、光吸收、光电导等测量分析表明，柱状晶粒分布致密，呈现良好的（２２０）择优取向生长．锐利的光吸收边意味着样品中有很低的带尾态密度，光吸收过程主要由晶粒中电子的带间跃迁所支配．小的光电导激活能说明晶界缺陷密度低，晶界势垒小．所有这些都是由于在薄膜生长过程中引入了氢等离子体的周期性原位处理，不仅抑制了非晶态相的形成、促进了晶粒的生长及织构构造的形成，同时也补偿了晶界的悬挂键缺陷．本文还探讨了这种低温织构ｐｏｌｙ－Ｓｉ薄膜作为光伏材料的应用可能性．
This paper reports the low temperature polycrystalline silicon (poly-Si) thin films prepared by microwave plasma deposition / atomic hydrogen treatment and their structural and optical properties. X-ray diffraction (XRD), transmission electron microscopy (TEM), optical absorption and photoconductivity measurements show that the columnar grains are densely distributed and exhibit good (220) preferential orientation growth. Sharp light absorption edge means there is a very low band tail density in the sample, and the light absorption process is dominated by the interband transition of electrons in the grain. The small photoconductive activation energy shows that the grain boundary defect density is low and the grain boundary barrier is small. All of these are due to the periodic in-situ treatment of hydrogen plasma introduced during film growth, which not only inhibits the formation of amorphous phase but also promotes the growth of grain and the formation of texture structure, Dangling dangling defects. This article also discusses the possibility of using this low temperature textured poly-Si film as a photovoltaic material.