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采用反应磁控溅射制备了高阻SnO2薄膜。利用X射线衍射、透射光谱、霍尔效应、暗电导温度关系等方法研究了退火对薄膜的结构?光学和电学性质的影响。发现在510℃退火1h后,SnO2薄膜从非晶态转变为四方相结构的多晶薄膜,光能隙在3.79 eV和3.92 eV之间,电阻率为8.5Ω.cm,电导激活能约为0.322 eV。研究结果表明,此方法制备的SnO2高阻膜适合作为过渡层应用于CdTe太阳电池中。
High-resistance SnO2 thin films were prepared by reactive magnetron sputtering. The effects of annealing on the optical and electrical properties of the films were investigated by X-ray diffraction, transmission spectroscopy, Hall effect and dark conductance. After annealing at 510 ℃ for 1h, the SnO2 thin films were transformed from amorphous to tetragonal polycrystalline thin films. The optical energy gap was between 3.79 eV and 3.92 eV, the resistivity was 8.5Ω.cm, and the conductance activation energy was about 0.322 eV. The results show that the SnO2 high resistance film prepared by this method is suitable as a transition layer for CdTe solar cells.