,Influence of GaAsP Insertion Layers on Performance of InGaAsP/InGaP/AlGaAs Quantum-Well Laser

来源 :中国物理快报（英文版） | 被引量 : 0次 | 上传用户：ajie830510

【摘要】

：

We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by meta

【作者】

：

CAO Yu-Lian LIAN Peng MA Wen-Quan WANG Qing WU Xu-Ming HE Guo-Rong LI Hui WANG Xiao-Dong SONG Guo-Feng CHEN Liang-Hui

【机构】

：

Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijin

【出处】

：

中国物理快报（英文版）

【发表日期】

：

2006年9期

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We report on the use of very thin GaAsP insertion layers to improve the performance of an InGaAsP/InGaP/AlGaAs single quantum-well laser structure grown by metal organic chemical vapour deposition.

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