介绍了光抽运垂直外腔面发射激光器的材料增益特性,以InGaAs/AlGaAs应变量子阱系统为例,建立了将带边偏置、能带结构和材料增益系统结合起来的理论模型。用Model-Solid模型确定带边偏置比,然后采用导带抛物线近似及价带6×6Luttinger哈密顿量精确计算了能带结构和材料增益。基于对材料增益特性的分析研究,优化设计了1μm波段的量子阱有源区,分别对量子阱的阱宽、阱深和阱的构成形式进行了优化设计并得到了最优选择,为光抽运垂直外腔面发射激光器的优化设计提供了理论依据。 The material gain characteristics of an optical pumping vertical-cavity surface-emitting laser are introduced. Taking the InGaAs / AlGaAs strained quantum well system as an example, a theoretical model combining band offset, band structure and material gain system is established. The Model-Solid model was used to determine the edge bias ratio and the band structure and material gain were accurately calculated using the conduction band parabolic approximation and the valence band 6 × 6 Luttinger Hamiltonian. Based on the analysis of the gain characteristics of the material, the active region of 1μm quantum well is optimized and the well width, well depth and trap formation of the quantum well are optimized and optimized respectively. Optimal design of vertical external cavity surface emitting lasers provides the theoretical basis.