论文部分内容阅读
介绍了目前国际上主流的薄膜体声波谐振器(FBAR)技术,分析了FBAR谐振器的结构设计和压电薄膜选取方案。依托Si基半导体工艺平台,采用牺牲层技术完成了空气腔的制作,利用磁控反应溅射技术制备的高质量(002)AlN薄膜作为压电材料,基于FBAR多层立体结构,实现了空气腔型FBAR谐振器的制作工艺,实际制作了FBAR谐振器样品。实测FBAR谐振器样品典型指标:Q值≥300,谐振频率为1.46 GHz,谐振频率覆盖L波段。测试结果验证了设计方案及工艺路径的正确性与可行性,为后续产品的研发提供了技术基础。
The current international mainstream thin film bulk acoustic resonator (FBAR) technology is introduced, and the structural design of the FBAR resonator and the piezoelectric thin film selection scheme are analyzed. Relying on the Si-based semiconductor process platform, the sacrificial layer technology was used to fabricate the air cavity. A high-quality (002) AlN film prepared by magnetron reactive sputtering was used as the piezoelectric material. Based on the FBAR multi-layer structure, FBAR resonator fabrication process, the actual production of the FBAR resonator samples. Measured FBAR resonator sample typical indicators: Q value ≥ 300, the resonant frequency of 1.46 GHz, resonant frequency coverage L band. The test results verify the correctness and feasibility of the design scheme and process path, and provide the technical basis for the follow-up product development.