We investigate the phantom field with potential V(φ) = V0 exp(-λφ2) and dark matter in the spatially flat Friedman-Robertson-Walker model. It has been shown
Rutherford backscattering (RBS)/channelling and high resolution x-ray diffraction (HRXRD) have been used to characterize the tetragonal distortion of a GaN epil
Communications—VLSI Researches and industries of telecommunications have been growing rapidly in the last 20 years and will keep their high growing pace in the
The influence of reactor pressure on GaN layers grown by hydride vapour phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5
The transition from an axisymmetric stationary now to three-dimensional time-dependent Hows is carefully studied in a vertical cylinder partially heated from th
High-power operation of uncoated 22-μm-wide quantum cascade lasers(QCLs)emitting at λ≈4.8 μm is reported.The emitting region of the QCL structure consists o