论文部分内容阅读
本文阐述了在亚微米接触孔，通孔及沟槽的SiO2刻蚀工艺中，沉积和离子散射对剖面的影响，对多层结构SiO2的刻蚀也进行了研究。我们观察到总的气体流量、局部沉积和温度都将对剖面产生很大影响，与其它有关大功率单片刻蚀系统的研究结果一致。另外，我们的实验结果还表明，CD一样时，3维（3D）的接触孔和通孔剖面比2维（2D）的沟槽要更陡些，且小尺寸比大尺寸的剖面更陡。对相同的纵横比，我们注意到2D的沟槽蚀速比3D通孔的更快。通过改变沉积速度，可使沟槽蚀速比大窗口快或慢，而通孔的蚀速总比大窗口的侵。根据我们的实验结果，认为亚微米SiO2刻蚀主要与立体角（solidangle）有关。
This paper describes the effect of deposition and ion scattering on the profile of SiO2 in sub-micron contact holes, vias and trenches, and also studies the etching of multi-layered SiO2. We observe that the total gas flow, local deposition and temperature will have a significant effect on the profile, consistent with the findings of other high power monolithic etching systems. In addition, our experimental results also show that 3-D (3-D) contact holes and via cross-sections are steeper than 2-dimensional (2D) trenches when CDs are the same, and that the small size is steeper than the large size profile. For the same aspect ratio, we noticed 2D trench etch faster than 3D vias. By changing the deposition rate, the trench etch rate can be faster or slower than a large window, while the via etch rate is always larger than the large window. According to our experimental results, it is considered that submicron SiO2 etching is mainly related to solidangle.