对高k栅介质SOI nMOSFET器件的PBTI退化和恢复进行实验研究,并且与pMOSFET器件的NBTI效应进行比较,分析PBTI效应对阈值电压漂移、线性及饱和漏电流、亚阈摆幅和应力诱导漏电流的影响。结果显示,PBTI的退化和恢复与NBTI效应具有相似的趋势,但是PBTI具有较高的退化速率和较低的恢复比例,这会对器件的寿命预测带来影响。最后给出在PBTI应力条件下,界面陷阱和体陷阱的产生规律及其对器件退化的影响。 The PBTI degradation and recovery of high-k gate dielectric SOI nMOSFET devices were investigated and compared with the NBTI effect of pMOSFET devices. The effects of PBTI on threshold voltage drift, linear and saturated leakage current, sub-threshold swing and stress induced leakage current Impact. The results show that the degradation and recovery of PBTI tend to be similar to the NBTI effect, but PBTI has a higher degradation rate and a lower recovery ratio, which will affect the life expectancy of the device. Finally, the generation rules of interface traps and body traps and their effects on device degeneration under PBTI stress conditions are given.