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在光注入半导体激光器中,为了更好地利用单周期振荡的单边带效应产生光载无线通信(Ro F)系统所需的单边带光,通过数值模拟的方法研究产生单边带效应的注入条件和影响因素。通过在不同注入强度和频率失谐下仿真光注入半导体激光器的速率方程,找到了产生单边带效应的条件范围。选取弱注入与强注入两种特定情况分别研究各参数对产生单边带效应的影响。结果发现,无论是弱注入还是强注入时,单边带效应都随偏置电流和线宽增强因子的减小而更加明显。弱注入时单边带效应随频率失谐的增大而变好,而强注入时需减小频率失谐才能得到较好的单边带效应。此外,强注入时单边带效应还会随着腔衰减率的增大而增强。因此,要想获得好的单边带光,需选取合适的激光器类型与外部注入参数。
In the light-injection semiconductor laser, in order to make better use of the single-sideband effect of single-cycle oscillation to generate the single-sideband light required by the RoF system, the single-sideband effect Injecting conditions and influencing factors. By simulating the rate equations of light injected into a semiconductor laser with different injection intensities and frequency detuning, the range of conditions for creating a single-sideband effect was found. We choose weak injection and strong injection to study the influence of each parameter on the single sideband effect. The results show that the single-sideband effect is more obvious with the decrease of the bias current and the line width enhancement factor. The single-sideband effect of weak injection becomes better with the increase of frequency detuning, while the strong injection needs to reduce the frequency detuning to get a better single-sideband effect. In addition, the strong side effects of single-band injection will increase with increasing cavity attenuation. Therefore, in order to obtain good unilateral band light, the appropriate laser type and external injection parameters should be selected.