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采用真空热蒸发法在玻璃、单晶硅衬底上制备Ce2O3掺杂TiO2薄膜,研究热处理和Ce2O3掺杂对薄膜性能的影响。结果显示,热处理可明显改善薄膜的结构和光学性能,Ce2O3掺杂可降低薄膜晶型转化温度。TiO2薄膜(玻璃衬底)经600℃热处理由锐钛矿转为金红石结构;当掺Ce2O3含量为5at%时热处理温度为500℃薄膜就已开始发生晶型转变。薄膜表面颗粒较均匀,存在程度不同的孔洞和颗粒聚集现象;掺Ce2O3后薄膜表面致密度明显增强。薄膜(玻璃衬底)的光学带隙从3.74 eV降至3.60 eV。
Ce2O3 doped TiO2 thin films were prepared on glass and monocrystalline silicon substrates by vacuum thermal evaporation. The effects of heat treatment and Ce2O3 doping on the properties of thin films were investigated. The results show that the heat treatment can significantly improve the structure and optical properties of the film, Ce2O3 doping can reduce the film crystal transition temperature. TiO2 film (glass substrate) was annealed at 600 ℃ from anatase to rutile structure. When the content of Ce2O3 was 5at%, the transformation temperature was 500 ℃. The surface of the film is more uniform, with different degrees of holes and particle aggregation. The surface density of the film after Ce2O3 doping is obviously enhanced. The optical bandgap of the thin film (glass substrate) dropped from 3.74 eV to 3.60 eV.