对光照射下硅桥谐振子的谐振频率变化进行了理论分析 ,并建立了相应的理论模型 .该理论模型建立在对硅桥进行热传导分析、热应力应变分析和机械振动分析的基础上 ,理论推导过程严密 ,且理论模型的模拟结果与实验测试数据吻合得很好 ,从而说明了理论模型的可靠性 The resonant frequency change of silicon bridge resonator under light irradiation was theoretically analyzed and a corresponding theoretical model was established.The theory model was established on the basis of thermal conductivity analysis, thermal stress and strain analysis and mechanical vibration analysis of silicon bridge. The theory The derivation process is rigorous, and the simulation results of the theoretical model are in good agreement with the experimental test data, which shows the reliability of the theoretical model