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利用局域分子束外延技术生长了含有SiGe量子阱的岛状结构。实现了生长的岛状结构侧面不与掩模材料相接触。这种含有量子阱的岛状结构具有比相同结构量子阱强20多倍的光致发光强度。
The island structure containing SiGe quantum wells was grown by using molecular beam epitaxy. The grown island side does not come into contact with the mask material. This quantum well-containing island structure has a photoluminescence intensity more than 20 times stronger than that of the same structure quantum well.