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提出了一种用于半导体闪速存储器单元的新的Si/Si Ge量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制.模拟结果表明该结构具有高速和高可靠性的优点.测试结果表明该结构的工作电压比传统NAND结构的存储器单元降低了4V.采用该结构能够实现高速、低功耗和高可靠性的半导体闪速存储器.
A new Si / Si Ge quantum dot / tunneling oxide / polysilicon gate multilayer structure for a semiconductor flash memory cell is proposed, which can realize the programming and erasing mechanism for enhancing FN tunneling. The simulation results show that The structure has the advantages of high speed and high reliability.The test results show that the structure of the working voltage than the traditional NAND structure of the memory cell is reduced by 4V using this structure can achieve high-speed, low power consumption and high reliability semiconductor flash memory.