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本文介绍了利用MBE方法生长的大功率AlGaAs单量子阱激光器的高温工作特性．激光器的室温连续输出功率达到2W．在95℃高温连续工作状态下，其输出功率仍可达到500mW的水平．器件的特征温度高达185K（35～85℃）及163K（85～95℃）．同室温相比，器件在95℃的工作条件下，其功率输出的斜效率下降了23％．
This article describes the high temperature operating characteristics of a high power AlGaAs single quantum well laser grown by the MBE method. The laser’s continuous output power at room temperature reaches 2W. In 95 ℃ high temperature continuous operation, the output power can still reach the level of 500mW. The characteristic temperature of the device is up to 185K (35-85 ℃) and 163K (85-95 ℃). Compared with room temperature, the device in the 95 ℃ operating conditions, the power output of the ramp efficiency decreased by 23%.