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飞利浦半导体公司开发了一种具有极低开态电阻和额定电压为２００Ｖ的功率ＭＯＳ－ＦＥＴ器件。这种“硅ＭＡＸ”器件采用沟槽ＭＯＳ工艺，兼有大功耗和快速开关速度的性能，其１００－２００Ｖ的额定电压来源于ＤＭＯＳ功率ＭＯＳＦＥＴ。这种新器件在开关型功率源，ＤＣ／Ｄ
Philips Semiconductors has developed a power MOS-FET device with an extremely low on-resistance and a nominal voltage of 200V. The “Silicon MAX” device uses a trench MOS process that combines both high power and fast switching speed with a 100-200V rated voltage derived from the DMOS power MOSFET. This new device is a switched mode power supply, DC / D